| PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
|---|---|---|---|---|---|---|---|
| 6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
| 8<\/td>\n | INTRODUCTION <\/td>\n<\/tr>\n | ||||||
| 9<\/td>\n | 1 Scope 2 Normative reference 3 Terms and definitions <\/td>\n<\/tr>\n | ||||||
| 10<\/td>\n | 4 Product categories and applications 4.1 Quality grade by application 4.2 Definition of quality grade\uff08Example\uff09 <\/td>\n<\/tr>\n | ||||||
| 12<\/td>\n | 5 Failure 5.1 Failure distribution <\/td>\n<\/tr>\n | ||||||
| 13<\/td>\n | 5.2 Early failure period 5.2.1 Description <\/td>\n<\/tr>\n | ||||||
| 14<\/td>\n | 5.2.2 Early failure rate 5.2.2.1 Early failure rate definition 5.2.2.2 Cumulative fail probability <\/td>\n<\/tr>\n | ||||||
| 15<\/td>\n | 5.2.3 Screening (Reduction of early failure) 5.3 Random failure period 5.3.1 Description 5.3.2 Failure rate in the random failure period 5.4 Wear-out failure period 5.4.1 Description <\/td>\n<\/tr>\n | ||||||
| 18<\/td>\n | 6 Reliability test 6.1 Reliability test methods <\/td>\n<\/tr>\n | ||||||
| 20<\/td>\n | 6.2 Acceleration models for reliability tests 7 Stress test methods <\/td>\n<\/tr>\n | ||||||
| 21<\/td>\n | 8 Summary table of assumptions <\/td>\n<\/tr>\n | ||||||
| 23<\/td>\n | 9 Summary <\/td>\n<\/tr>\n | ||||||
| 24<\/td>\n | Annex A Gate screening (TDDB measurement and screening method of gate oxide) A.1 Introduction A.2 TDDB of gate oxide A.2.1 TDDB A.2.2 Gate oxide breakdown mechanism <\/td>\n<\/tr>\n | ||||||
| 25<\/td>\n | A.2.3 TDDB lifetime estimation equation A.3 The TDDB measurement method and the lifetime estimation method A.3.1 Ambient temperature, stress voltage, sample size and test method A.3.1.1 The TDDB measurement <\/td>\n<\/tr>\n | ||||||
| 26<\/td>\n | A.3.1.2 The TDDB Weibull plot A.3.1.3 Calculation of the lifetime parameters and estimation of the lifetime <\/td>\n<\/tr>\n | ||||||
| 27<\/td>\n | A.4 Voltage Screening <\/td>\n<\/tr>\n | ||||||
| 28<\/td>\n | A.4.1 The breakdown voltage distribution of gate oxide and the screening <\/td>\n<\/tr>\n | ||||||
| 29<\/td>\n | A.4.2 The screening technique of power MOSFETs A.4.3 Comparison between the voltage screening and the burn-in test A.4.4 The method to calculate the early failure rate of gate oxide breakdown A.4.4.1 The lifetime estimation by using the Weibull plot <\/td>\n<\/tr>\n | ||||||
| 30<\/td>\n | A.4.4.2 An example of the calculation <\/td>\n<\/tr>\n | ||||||
| 31<\/td>\n | A.4.5 An example of the TDDB lifetime estimation by using the voltage step stress method <\/td>\n<\/tr>\n | ||||||
| 33<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" BS EN IEC 63287-3. Semiconductor devices. Generic semiconductor qualification guidelines – Part 3. Guidelines for reliability qualification plans for power semiconductor module<\/b><\/p>\n |