{"id":291348,"date":"2024-10-19T19:46:58","date_gmt":"2024-10-19T19:46:58","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iso-147012018\/"},"modified":"2024-10-25T16:48:50","modified_gmt":"2024-10-25T16:48:50","slug":"bs-iso-147012018","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iso-147012018\/","title":{"rendered":"BS ISO 14701:2018"},"content":{"rendered":"
This document specifies several methods for measuring the oxide thickness at the surfaces of (100) and (111) silicon wafers as an equivalent thickness of silicon dioxide when measured using X-ray photoelectron spectroscopy. It is only applicable to flat, polished samples and for instruments that incorporate an Al or Mg X-ray source, a sample stage that permits defined photoelectron emission angles and a spectrometer with an input lens that can be restricted to less than a 6\u00b0 cone semi-angle. For thermal oxides in the range 1 nm to 8 nm thickness, using the best method described in this document, uncertainties, at a 95 % confidence level, could typically be around 2 % and around 1 % at optimum. A simpler method is also given with slightly poorer, but often adequate, uncertainties.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
2<\/td>\n | National foreword <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | Foreword <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | Introduction <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 1 Scope 2 Normative references 3 Terms and definitions 4 Abbreviated terms and symbols 4.1 Abbreviated terms 4.2 Symbols <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 5 Outline of method <\/td>\n<\/tr>\n | ||||||
12<\/td>\n | 6 Method for measuring the oxide thickness 6.1 Cleaning and preparing the sample <\/td>\n<\/tr>\n | ||||||
13<\/td>\n | 6.2 Mounting the sample 6.3 Choosing spectrometer settings <\/td>\n<\/tr>\n | ||||||
16<\/td>\n | 6.4 Recording data <\/td>\n<\/tr>\n | ||||||
17<\/td>\n | 6.5 Measuring intensities <\/td>\n<\/tr>\n | ||||||
20<\/td>\n | 6.6 Calculating the oxide thickness <\/td>\n<\/tr>\n | ||||||
21<\/td>\n | 6.7 Calculating the uncertainty of the oxide thickness <\/td>\n<\/tr>\n | ||||||
23<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Surface chemical analysis. X-ray photoelectron spectroscopy. Measurement of silicon oxide thickness<\/b><\/p>\n |