{"id":233722,"date":"2024-10-19T15:14:25","date_gmt":"2024-10-19T15:14:25","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-iec-60747-42007a12017\/"},"modified":"2024-10-25T09:45:04","modified_gmt":"2024-10-25T09:45:04","slug":"bs-iec-60747-42007a12017","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-iec-60747-42007a12017\/","title":{"rendered":"BS IEC 60747-4:2007+A1:2017"},"content":{"rendered":"
This part of IEC 60747 gives requirements for the following categories of discrete devices:<\/p>\n
variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification);<\/p>\n<\/li>\n
mixer diodes and detector diodes;<\/p>\n<\/li>\n
avalanche diodes (for direct harmonic generation, amplification);<\/p>\n<\/li>\n
gunn diodes (for direct harmonic generation);<\/p>\n<\/li>\n
bipolar transistors (for amplification, oscillation);<\/p>\n<\/li>\n
field-effect transistors (for amplification, oscillation).<\/p>\n<\/li>\n<\/ul>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
---|---|---|---|---|---|---|---|
2<\/td>\n | National foreword <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | FOREWORD <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 1 Scope 2 Normative references 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes 3.1 Variable capacitance diodes 3.1.1 General <\/td>\n<\/tr>\n | ||||||
9<\/td>\n | 3.1.2 Terminology and letter symbols 3.1.3 Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | 3.1.4 Measuring methods <\/td>\n<\/tr>\n | ||||||
37<\/td>\n | 3.2 Snap-off diodes, Schottky diodes 3.2.1 General 3.2.2 Terminology and letter symbols <\/td>\n<\/tr>\n | ||||||
38<\/td>\n | 3.2.3 Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
40<\/td>\n | 3.2.4 Measuring methods <\/td>\n<\/tr>\n | ||||||
47<\/td>\n | 4 Mixer diodes and detector diodes 4.1 Mixer diodes used in radar applications 4.1.1 General 4.1.2 Terminology and letter symbols <\/td>\n<\/tr>\n | ||||||
48<\/td>\n | 4.1.3 Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
50<\/td>\n | 4.1.4 Measuring methods <\/td>\n<\/tr>\n | ||||||
68<\/td>\n | 4.2 Mixer diodes used in communication applications 4.2.1 General 4.2.2 Terminology and letter symbols 4.2.3 Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
70<\/td>\n | 4.2.4 Measuring methods 4.3 Detector diodes 5 Impatt diodes 5.1 Impatt diodes amplifiers 5.1.1 General 5.1.2 Terms and definitions <\/td>\n<\/tr>\n | ||||||
73<\/td>\n | 5.1.3 Essential ratings and characteristics <\/td>\n<\/tr>\n | ||||||
76<\/td>\n | 5.2 Impatt diodes oscillators <\/td>\n<\/tr>\n | ||||||
77<\/td>\n | 6 Gunn diodes 6.1 General 6.2 Terms and definitions 6.3 Essential ratings and characteristics 6.4 Measuring methods 6.4.1 Pulse breakdown voltage V(BR) <\/td>\n<\/tr>\n | ||||||
78<\/td>\n | 6.4.2 Threshold voltage <\/td>\n<\/tr>\n | ||||||
79<\/td>\n | 6.4.3 Resistance <\/td>\n<\/tr>\n | ||||||
80<\/td>\n | 7 Bipolar transistors 7.1 General 7.2 Terms and definitions <\/td>\n<\/tr>\n | ||||||
83<\/td>\n | 7.3 Essential ratings and characteristics 7.3.1 General 7.3.2 Limiting values (absolute maximum rating system) <\/td>\n<\/tr>\n | ||||||
86<\/td>\n | 7.4 Measuring methods 7.4.1 General <\/td>\n<\/tr>\n | ||||||
87<\/td>\n | 7.4.2 DC characteristics 7.4.3 RF characteristics <\/td>\n<\/tr>\n | ||||||
100<\/td>\n | 7.5 Verifying methods 7.5.1 Load mismatch tolerance (\u03a8L) <\/td>\n<\/tr>\n | ||||||
103<\/td>\n | 7.5.2 Source mismatch tolerance (\u03a8S) <\/td>\n<\/tr>\n | ||||||
106<\/td>\n | 7.5.3 Load mismatch ruggedness (\u03a8R) <\/td>\n<\/tr>\n | ||||||
108<\/td>\n | 8 Field-effect transistors 8.1 General 8.2 Terms and definitions <\/td>\n<\/tr>\n | ||||||
111<\/td>\n | 8.3 Essential ratings and characteristics 8.3.1 General 8.3.2 Limiting values (absolute maximum rating system) <\/td>\n<\/tr>\n | ||||||
112<\/td>\n | 8.4 Measuring methods 8.4.1 General <\/td>\n<\/tr>\n | ||||||
113<\/td>\n | 8.4.2 DC characteristics <\/td>\n<\/tr>\n | ||||||
119<\/td>\n | 8.4.3 RF characteristics <\/td>\n<\/tr>\n | ||||||
129<\/td>\n | 8.5 Verifying methods 8.5.1 Load mismatch tolerance (\u03a8L) 8.5.2 Source mismatch tolerance (\u03a8S) 8.5.3 Load mismatch ruggedness (\u03a8R) <\/td>\n<\/tr>\n | ||||||
130<\/td>\n | 9 Assessment and reliability \u2013 specific requirements 9.1 Electrical test conditions 9.2 Failure criteria and failure-defining characteristics for acceptance tests 9.3 Failure criteria and failure-defining characteristics for reliability tests 9.4 Procedure in case of a testing error <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Discrete devices – Microwave diodes and transistors<\/b><\/p>\n |