BSI PD IEC/TS 62607-5-1:2014
$102.76
Nanomanufacturing. Key control characteristics – Thin-film organic/nano electronic devices. Carrier transport measurements
| Published By | Publication Date | Number of Pages |
| BSI | 2014 | 20 |
This part of IEC 62607, which is a Technical Specification, provides a standardized sample structure for characterizing charge transport properties in thin-film organic/nano electronic devices and a format to report details of the structure which shall be provided with the measurement results. The standardized OTFT testing structure with a contact-area-limited doping can mitigate contact resistance and enable reliable measurement of the charge carrier mobility. The purpose of this Technical Specification is to provide test sample structures for determining the intrinsic charge transport properties of organic thin-film devices. The intention is to provide reliable materials information for OTFTs and to set guidelines for making test sample structures so that materials information is clear and consistent throughout the research community and industry.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 4 | CONTENTS |
| 5 | FOREWORD |
| 7 | INTRODUCTION |
| 8 | 1 Scope 2 Normative references 3 Terms, definitions and abbreviations 3.1 Terms and definitions |
| 9 | 3.2 Symbols and abbreviated terms |
| 10 | 4 Sample structures of OTFTs 4.1 Typical device structures of OTFTs 4.2 Contact-area-limited doping in OTFTs Figures Figure 1 – Typical device structures of OTFTs |
| 11 | 5 Appropriate data format Figure 2 – Contact-area-limited doping in OTFTs Figure 3 – Summary of this Technical Specification |
| 12 | Tables Table 1 – Possible data format to be given together with carrier transport properties of OTFTs |
| 13 | Annex A (informative) Experimental studies on contact-area-limited doping in OTFTs A.1 Contact-area-limited doping in bottom-gate, top-contact OTFTs |
| 14 | Figure A.1 – Sample preparation of bottom-gate, top-contact (BGTC) pentacene OTFTs using contact-area-limited doping Figure A.2 – Contact-area-limited doping effect in bottom-gate, top-contact (BGTC) pentacene OTFTs |
| 15 | A.2 Contact-area-limited doping in bottom-gate, bottom-contact OTFTs Figure A.3 – Sample preparation of bottom-gate, bottom-contact (BGBC) p-channel OTFTs using contact-area-limited doping |
| 16 | Figure A.4 – Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) pentacene OTFTs Figure A.5 – Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) oligothiophene OTFTs |
| 17 | Bibliography |
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BSI PD IEC/TS 62607-5-1:2014
Nanomanufacturing. Key control characteristics – Thin-film organic/nano electronic devices. Carrier transport measurements Published By Publication…
