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BSI 23/30478757 DC 2023

BSI 23/30478757 DC 2023

$13.70

BS EN IEC 63287-3. Semiconductor devices. Generic semiconductor qualification guidelines – Part 3. Guidelines for reliability qualification plans for power semiconductor module

Published By Publication Date Number of Pages
BSI 2023 34
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PDF Catalog

PDF Pages PDF Title
6 FOREWORD
8 INTRODUCTION
9 1 Scope
2 Normative reference
3 Terms and definitions
10 4 Product categories and applications
4.1 Quality grade by application
4.2 Definition of quality grade（Example）
12 5 Failure
5.1 Failure distribution
13 5.2 Early failure period
5.2.1 Description
14 5.2.2 Early failure rate
5.2.2.1 Early failure rate definition
5.2.2.2 Cumulative fail probability
15 5.2.3 Screening (Reduction of early failure)
5.3 Random failure period
5.3.1 Description
5.3.2 Failure rate in the random failure period
5.4 Wear-out failure period
5.4.1 Description
18 6 Reliability test
6.1 Reliability test methods
20 6.2 Acceleration models for reliability tests
7 Stress test methods
21 8 Summary table of assumptions
23 9 Summary
24 Annex A
Gate screening (TDDB measurement and screening method of gate oxide)
A.1 Introduction
A.2 TDDB of gate oxide
A.2.1 TDDB
A.2.2 Gate oxide breakdown mechanism
25 A.2.3 TDDB lifetime estimation equation
A.3 The TDDB measurement method and the lifetime estimation method
A.3.1 Ambient temperature, stress voltage, sample size and test method
A.3.1.1 The TDDB measurement
26 A.3.1.2 The TDDB Weibull plot
A.3.1.3 Calculation of the lifetime parameters and estimation of the lifetime
27 A.4 Voltage Screening
28 A.4.1 The breakdown voltage distribution of gate oxide and the screening
29 A.4.2 The screening technique of power MOSFETs
A.4.3 Comparison between the voltage screening and the burn-in test
A.4.4 The method to calculate the early failure rate of gate oxide breakdown
A.4.4.1 The lifetime estimation by using the Weibull plot
30 A.4.4.2 An example of the calculation
31 A.4.5 An example of the TDDB lifetime estimation by using the voltage step stress method
33 Bibliography

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BSI 23/30478757 DC 2023
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