BS IEC 60747-9:2007
$198.66
Semiconductor devices. Discrete devices – Insulated-gate bipolar transistors (IGBTs)
| Published By | Publication Date | Number of Pages |
| BSI | 2007 | 60 |
This part of IEC 60747 gives product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs). The major changes with respect to the previous edition are mainly of an editorial nature.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 4 | English CONTENTS |
| 7 | 1 Scope 2 Normative references 3 Terms and definitions 3.1 Graphical symbol of IGBT |
| 8 | 3.2 General terms 3.3 Terms related to ratings and characteristics; voltages and currents |
| 10 | 3.4 Terms related to ratings and characteristics; other characteristics |
| 12 | 4 Letter symbols 4.1 General 4.2 Additional general subscripts |
| 13 | 4.3 List of letter symbols |
| 14 | 5 Essential ratings and characteristics 5.1 Ratings (limiting values) |
| 15 | 5.2 Characteristics |
| 17 | 6 Measuring methods 6.1 General 6.2 Verification of ratings (limiting values) Table 1 – Acceptance-defining characteristics |
| 18 | Figures Figure 1 – Circuit for measuring the collector-emitter voltages VCES, VCER, VCEX |
| 19 | Figure 2 – Circuit for testing the gate-emitter voltage ±VGES |
| 20 | Figure 3 – Circuit for measuring collector current |
| 21 | Figure 4 – Circuit for measuring peak collector current |
| 22 | Figure 5 – Test circuit of reverse safe operating area (RBSOA) Figure 6 – Waveforms of gate-emitter voltage VGE and collector current IC during turn-off |
| 23 | Figure 7 – Circuit for testing safe operating pulse width at load short circuit (SCSOA1) |
| 24 | Figure 8 – Waveforms of gate-emitter voltage VGE, collector current IC and voltage VCE during load short-circuit condition SCSOA1 |
| 25 | Figure 9 – Short-circuit safe operating area 2 (SCSOA2) Figure 10 – Waveforms during SCSOA2 |
| 26 | 6.3 Methods of measurement Figure 11 – Circuit for measuring the collector-emitter sustaining voltage VCE*sus |
| 27 | Figure 12 – Operating locus of the collector current |
| 28 | Figure 13 – Circuit for measuring the collector-emitter saturation voltage VCEsat |
| 29 | Figure 14 – Basic circuit for measuring the gate-emitter threshold voltage |
| 30 | Figure 15 – Circuit for measuring the collector cut-off current |
| 31 | Figure 16 – Circuit for measuring the gate leakage current |
| 32 | Figure 17 – Circuit for measuring the input capacitance |
| 33 | Figure 18 – Circuit for measuring the output capacitance |
| 34 | Figure 19 – Circuit for measuring the reverse transfer capacitance |
| 35 | Figure 20 – Circuit for measuring the gate charge Figure 21 – Basic gate charge waveform |
| 36 | Figure 22 – Circuit for measuring the short-circuit internal gate resistance |
| 37 | Figure 23 – Circuit for measuring turn-on times and energy |
| 38 | Figure 24 – Waveforms during turn-on times |
| 39 | Figure 25 – Circuit for measuring turn-off times and energy Figure 26 – Waveforms during turn-off times |
| 41 | Figure 27 – Circuit for measuring the variation with temperature of the collector- emitter voltage VCE at a low measuring current IC1 and for heating up the IGBT by a high current IC2 |
| 42 | Figure 28 – Typical variation of the collector-emitter voltage VCE at a low measuring current IC1 with the case temperature Tc (when heated from outside, i.e. Tc = Tvj) |
| 43 | Figure 29 – Circuit for measuring thermal resistance and transient thermal impedance: method 2 |
| 44 | Figure 30 – Typical variation of the gate-emitter threshold voltage VGE(th) at a low measuring current IC2 with the case temperature Tc (when heated from the outside, i.e. Tc = Tvj) |
| 45 | 7 Acceptance and reliability 7.1 General requirements 7.2 Specific requirements Figure 31 – IC, VGE and Tc with time |
| 46 | Figure 32 – Circuit for high-temperature blockings Table 2 – Acceptance-defining characteristics for endurance and reliability tests |
| 47 | Figure 33 – Circuit for high-temperature gate bias Figure 34 – Circuit for intermittent operating life |
| 48 | 7.3 Type tests and routine tests Figure 35 – Expected number of cycles versus temperature rise dTvj |
| 49 | Table 3 – Minimum type and routine tests for IGBTs when applicable |
| 50 | Annex A (normative) Measuring method for collector-emitter breakdown voltage Figure A.1 – Circuit for testing the collector-emitter breakdown voltage |
| 52 | Annex B (normative) Measuring method for inductive load turn-off current under specified conditions Figure B.1 – Measuring circuit for inductive load turn-off current Figure B.2 – Waveforms of collector current IC and collector voltage VCE during turn-off |
| 54 | Annex C (normative) Forward biased safe operating area (FBSOA) Figure C.1 – Test circuit of forward biased safe operating area (method 1) |
| 55 | Figure C.2 – Typical dVCE versus collector-emitter voltage VCE characteristics Figure C.3 – Typical forward biased safe operating area |
| 56 | Figure C.4 – Circuit testing forward biased safe operating area (method 2) |
| 57 | Figure C.5 – Latching mode operation waveforms Figure C.6 – Latching mode I-V characteristic |
| 58 | Annex D (normative) Case non-rupture |
| 59 | Bibliography |
