BS EN 62047-9:2011:2013 Edition

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Semiconductor devices. Micro-electromechanical devices – Wafer to wafer bonding strength measurement for MEMS

Published By	Publication Date	Number of Pages
BSI	2013	30

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Categories: 31.080.99 - Other semiconductor devices, BSI

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Description

This standard describes bonding strength measurement method of wafer to wafer bonding, type of bonding process such as silicon to silicon fusion bonding, silicon to glass anodic bonding, etc., and applicable structure size during MEMS processing/assembly. The applicable wafer thickness is in the range of 10 µm to several millimeters.

Additional information

Status	Definitive
Pages	30
Publication Date	2013-01-31
ISBN	978 0 580 78793 5
Standard Number	BS EN 62047-9:2011
Title	Semiconductor devices. Micro-electromechanical devices – Wafer to wafer bonding strength measurement for MEMS
Identical National Standard Of	IEC 62047-9:2011/COR1:2012
Corrects	BS EN 62047-9:2011
Descriptors	Semiconductor devices, Bonding, Tensile testing, Substrates (insulating), Electrostatics, Electronic equipment and components, Electromechanical devices, Bend testing, Shear testing, Visual inspection (testing), Adhesive strength, Integrated circuits, Semiconductor technology, Adhesion tests
Publisher	BSI
Committee	EPL/47
ICS Codes	31.080.99 - Other semiconductor devices

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BS EN 62047-9:2011:2013 Edition

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