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ASTM-F616M:2001 Edition

ASTM-F616M:2001 Edition

$35.75

F616M-96 Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)

Published By Publication Date Number of Pages
ASTM 2001 7
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ASTM F616M-96

Historical Standard: Standard Test Method for Measuring MOSFET Drain Leakage Current (Metric)

ASTM F616M

Scope

1.1 This test method covers the measurement of MOSFET (Note 1) drain leakage current.

Note 1-MOS is an acronym for metal-oxide semiconductor; FET is an acronym for field-effect transistor.

1.2 This test method is applicable to all enhancement-mode and depletion-mode MOSFETs. This test method specifies positive voltage and current, conventions specifically applicable to n-channel MOSFETs. The substitution of negative voltage and negative current makes the method directly applicable to p-channel MOSFETs.

1.3 The d-c test method is applicable for the range of drain voltages greater than 0 V but less than the drain breakdown voltage.

1.4 This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords

drain leakage current; leakage current; MOSFET

ICS Code

ICS Number Code 17.220.20 (Measurement of electrical and magnetic quantities)

DOI: 10.1520/F0616M-96

PDF Catalog

PDF Pages PDF Title
1 Scope
Referenced Documents
2 Terminology
Significance and Use
3 Classification—Types
Tests for the Evaluation of Papers
Evaluation of Papers for Life Expectancy
TABLE 1
TABLE 2
4 Procedure for Selection of Paper for Permanent and Durable Records
Considerations Other Than Permanence and Durability
TABLE 3
5 Test Methods
Certification
Keywords
X1. ADDITIONAL INFORMATION
X1.1
X1.2
X1.3
6 X1.4
X1.5
X1.6
X1.7
X1.8
X1.9
REFERENCES
TABLE X1.1

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